Suwon, South Korea

Hyoung Won Kim

This inventor holds 1 USPTO granted patent. Top assignee: Charm Engineering Co., Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyoung Won Kim. Retrieved from https://idiyas.com/inventor/hyoung-won-kim-i8l92shl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Hyoung Won Kim: Innovator in Plasma Processing Technology

Introduction

Hyoung Won Kim is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of a unique plasma processing apparatus and method.

Latest Patents

Hyoung Won Kim holds a patent for a "Plasma processing apparatus and method for plasma processing." This invention includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The design allows for effective substrate level etching and backside etching processes, enhancing the efficiency of plasma processing.

Career Highlights

Hyoung Won Kim is associated with Charm Engineering Co., Ltd., where he continues to advance his research and development efforts. His work has been instrumental in improving plasma processing techniques, which are crucial in various industrial applications.

Collaborations

Hyoung Won Kim has collaborated with notable colleagues such as Young Ho Seo and Chi Kug Yoon. Their combined expertise has contributed to the success of their projects and innovations in the field.

Conclusion

Hyoung Won Kim's contributions to plasma processing technology exemplify the impact of innovative thinking in engineering. His patent and ongoing work at Charm Engineering Co., Ltd. highlight his role as a key figure in advancing this important technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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