Fairborn, OH, United States of America

Hyong Y Lee


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Fairborn, OH (US) (1995)
  • Beavercreek, OH (US) (1997)

Company Filing History:


Years Active: 1995-1997

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2 patents (USPTO):Explore Patents

Title: Hyong Y Lee: Innovator in Gallium Arsenide Technology

Introduction

Hyong Y Lee is a notable inventor based in Fairborn, OH (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide field effect transistors. With a total of 2 patents to his name, Lee's work has advanced the performance and reliability of electronic devices.

Latest Patents

Lee's latest patents focus on the incorporation of an aluminum arsenide (AlAs) buffer layer in gallium arsenide (GaAs) field effect transistor (FET) structures. This innovation has been found to enhance overall device performance, especially in high-temperature operating conditions. Devices utilizing this technology have demonstrated improved output conductance characteristics and reduced parasitic leakage currents at elevated temperatures, specifically at 350°C. The AlAs buffer layer not only limits increased conduction at temperatures above 250°C but also addresses backgating issues that can affect the operation of closely spaced monolithic GaAs digital circuits. The advancements achieved through this technology have resulted in a significant improvement in switching characteristics compared to previously known results.

Career Highlights

Hyong Y Lee is currently associated with the United States of America as represented by the Secretary of the Air Force. His work has been instrumental in pushing the boundaries of semiconductor technology, particularly in applications that require high reliability and performance under extreme conditions.

Collaborations

Lee has collaborated with notable colleagues, including Belinda Johnson and Rocky Reston, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Hyong Y Lee's contributions to gallium arsenide technology exemplify the impact of innovative thinking in the field of electronics. His patents reflect a commitment to enhancing device performance and reliability, paving the way for future advancements in semiconductor technology.

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