Hwaseong-si, South Korea

Hyo-Sik Mun

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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2 patents (USPTO):Explore Patents

Title: Hyo-Sik Mun: Innovator in Semiconductor Technology

Introduction

Hyo-Sik Mun is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in capacitor structures. With a total of 2 patents to his name, Mun continues to push the boundaries of innovation in his field.

Latest Patents

Hyo-Sik Mun's latest patents focus on advanced capacitor structures and semiconductor devices. One of his notable inventions is a capacitor that includes a lower electrode made of a first metal material, which has a crystal size in the range of a few nanometers. This capacitor features a dielectric layer that covers the lower electrode, with a second crystal size determined by a crystal expansion ratio times the first crystal size. Additionally, the upper electrode, made of a second metal material, covers the dielectric layer and has a third crystal size that is smaller than the second crystal size. This innovative design enhances the performance and efficiency of semiconductor devices.

Career Highlights

Hyo-Sik Mun is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to collaborate with some of the brightest minds in the industry, contributing to groundbreaking advancements in semiconductor technology.

Collaborations

Some of Hyo-Sik Mun's coworkers include Eun-Sun Kim and Sang-Yeol Kang. Their collaborative efforts have played a crucial role in the development of innovative technologies within the company.

Conclusion

Hyo-Sik Mun is a dedicated inventor whose work in semiconductor technology has led to significant advancements in capacitor structures. His contributions continue to influence the industry and pave the way for future innovations.

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