The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Jul. 02, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Eun-Sun Kim, Suwon-si, KR;
Sang-Yeol Kang, Yongin-si, KR;
Kyoo-Ho Jung, Seoul, KR;
Kyu-Ho Cho, Seoul, KR;
Hyo-Sik Mun, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01G 4/10 (2006.01); H01L 49/02 (2006.01); H01G 4/008 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01G 4/008 (2013.01); H01G 4/10 (2013.01); H10B 12/315 (2023.02);
Abstract
A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.