Edison, NJ, United States of America

Hyo C Lee

This inventor holds 3 USPTO granted patents. Top assignee: Engelhard Corporation. Active years: 1985-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyo C Lee. Retrieved from https://idiyas.com/inventor/hyo-c-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1985-1992

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3 patents (USPTO):Explore Patents

Title: Hyo C Lee: Innovator in Ammonia Oxidation Technology

Introduction

Hyo C Lee is a prominent inventor based in Edison, NJ, known for his significant contributions to the field of ammonia oxidation technology. With a total of three patents to his name, Lee has made remarkable advancements that enhance the efficiency of ammonia oxidation processes.

Latest Patents

Among his latest patents, Lee developed a method for low temperature start-up of ammonia oxidation plants. This innovative approach involves passing hydrogen and oxygen over platinum-containing gauzes that bear a platinum coating with a surface area exceeding 50 cm²/g. This method effectively heats the gauzes to temperatures sufficient for the catalytic oxidation of ammonia. Another notable patent focuses on platinum-rhodium and platinum-palladium-rhodium gauzes, which also feature a high surface area coating. This design facilitates the initiation of ammonia oxidation at lower temperatures, showcasing Lee's commitment to improving industrial processes.

Career Highlights

Hyo C Lee has built a successful career at Engelhard Corporation, where he has applied his expertise in catalysis and chemical engineering. His work has not only contributed to the company's reputation but has also advanced the field of ammonia oxidation technology significantly.

Collaborations

Throughout his career, Lee has collaborated with esteemed colleagues, including W Robert Hatfield and Robert J Farrauto. These partnerships have fostered an environment of innovation and have led

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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