Hwasung, South Korea

Hyeonggeun An

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Hyeonggeun An: Innovator in Variable Resistance Memory Devices

Introduction

Hyeonggeun An is a notable inventor based in Hwasung, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative methods. His work focuses on enhancing the performance and efficiency of memory technology.

Latest Patents

Hyeonggeun An holds a patent for a "Method of forming variable resistance memory device." This method involves forming an opening in an insulating layer and creating a variable resistance layer by filling the opening with an antimony-rich antimony-tellurium compound. This invention is crucial for advancing memory device technology.

Career Highlights

Hyeonggeun An is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role at Samsung allows him to work on cutting-edge innovations that shape the future of electronic devices.

Collaborations

Some of Hyeonggeun An's coworkers include Dong-Hyun Im and Sunglae Choi. Their collaboration contributes to the development of advanced technologies in the field of memory devices.

Conclusion

Hyeonggeun An's contributions to the field of variable resistance memory devices highlight his innovative spirit and dedication to technological advancement. His work at Samsung Electronics Co., Ltd. continues to influence the future of memory technology.

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