Suwon-si, South Korea

Hyeoncheon Jo

This inventor holds 2 USPTO granted patents and 4 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeoncheon Jo. Retrieved from https://idiyas.com/inventor/hyeoncheon-jo-9y4dyz55

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Hyeoncheon Jo: Inventor of Object-Based Feedback Technology.

Introduction

Hyeoncheon Jo is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His work includes a patent for an electronic device that provides feedback based on user input and detected objects.

Latest Patents

Jo is credited with 1 patent: “Device for Outputting Object-Based Feedback, Operating Method Thereof, and Recording Medium.” The invention describes an electronic device with memory and a processor that executes stored instructions. In response to user input, the device generates initial feedback, then generates additional feedback based on an object detected in a display region, surrounding physical space, or virtual space, and outputs both forms of feedback.

Career Highlights

Jo’s patent reflects work on interactive electronic devices that combine user input with contextual information from detected objects. The disclosed approach supports feedback that can respond to a device’s display and its physical or virtual surroundings.

Collaborations

Hoseon Shin and Taegu Kim are identified as Jo’s coworkers. The available information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Hyeoncheon Jo’s recorded patent at Samsung Electronics Ltd. focuses on delivering sequential, context-aware feedback in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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