Suwon, South Korea

Hyeonah Jo

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeonah Jo. Retrieved from https://idiyas.com/inventor/hyeonah-jo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hyeonah Jo: Semiconductor Device Inventor

Introduction

Hyeonah Jo is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics Ltd. His patent work includes a semiconductor device designed to connect data storage patterns through layered conductive lines and via contacts. Jo is credited with 1 patent in the information provided.

Latest Patents

Jo’s listed patent, “Semiconductor device,” describes multiple data storage patterns arranged on a substrate and spaced apart along a first direction. A first upper conductive line extends in that direction and connects to the storage patterns. Above it, a second upper conductive line runs in the same direction, with multiple via contacts positioned between the two lines. The via contacts are spaced apart and offset from the data storage patterns, forming a distinctive arrangement within the device.

Career Highlights

Jo’s documented patent activity reflects work in semiconductor device design. The invention focuses on the arrangement and electrical connection of data storage patterns, conductive lines, and via contacts.

Collaborations

Jo’s listed coworkers include Yongjae Kim and Woojin Kim. The available information identifies them as colleagues but does not specify their roles in the patent.

Conclusion

Hyeonah Jo’s recorded invention concerns the structural arrangement of components in a semiconductor device and represents his documented contribution to patent innovation at Samsung Electronics Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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