Asan, South Korea

Hyeon-Hwan Kim

This inventor holds 14 USPTO granted patents. Top assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.. Active years: 2002-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeon-Hwan Kim. Retrieved from https://idiyas.com/inventor/hyeon-hwan-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 71.4

Average Co-Inventor Count = 5.1

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Cheonan, KR (2002 - 2007)
  • Cheonan-si, KR (2012 - 2013)
  • Asan-si, KR (2012 - 2019)

Company Filing History:


Years Active: 2002-2019

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14 patents (USPTO):Explore Patents

Title: Inventor Hyeon-Hwan Kim: Pioneering Innovations in Asan-si, KR

Introduction: Hyeon-Hwan Kim is a distinguished inventor based in Asan-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyeon-Hwan Kim holds several patents in various technological domains, including artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and ingenuity in inventing cutting-edge solutions.

Career Highlights: With a career spanning over two decades, Hyeon-Hwan Kim has established himself as a visionary inventor, with a keen focus on developing sustainable technologies that have the potential to revolutionize industries and improve the quality of life.

Collaborations: Throughout his career, Hyeon-Hwan Kim has collaborated with leading research institutions, universities, and multinational companies to bring his inventions to life, fostering a culture of innovation and knowledge-sharing in the scientific community.

Conclusion: Hyeon-Hwan Kim's relentless passion for innovation and his commitment to pushing the boundaries of technological advancement make him a true pioneer in the world of inventors, inspiring future generations to dream big and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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