Suwon, South Korea

Hye-rim Park

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hye-rim Park. Retrieved from https://idiyas.com/inventor/hye-rim-park-lvmp11yn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Hye-rim Park: Innovator in Semiconductor Fabrication

Introduction

Hye-rim Park is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in device fabrication.

Latest Patents

Hye-rim Park holds 1 patent for a method of fabricating a semiconductor device. This patent outlines a comprehensive process that includes forming a buffer oxide layer in specific regions of a semiconductor substrate. The method involves creating preliminary mask patterns, defining active regions, and ensuring that the substrate is effectively prepared for further processing.

Career Highlights

Hye-rim Park is currently employed at Samsung Electronics Co., Ltd. His work at this leading technology company has allowed him to engage in cutting-edge research and development. His expertise in semiconductor fabrication has contributed to the company's reputation for innovation.

Collaborations

Hye-rim Park has collaborated with talented coworkers such as Se-Myeong Jang and Dae-Ik Kim. Their combined efforts in the field of semiconductor technology have led to advancements that benefit the industry.

Conclusion

Hye-rim Park is a distinguished inventor whose work in semiconductor fabrication exemplifies innovation and technical expertise. His contributions continue to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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