Company Filing History:
Years Active: 2017-2020
Title: Innovative Contributions of Hye-Jin Yim in Nonvolatile Memory Technology
Introduction: Hye-Jin Yim, an accomplished inventor based in Wonju-si, South Korea, has made significant strides in the field of nonvolatile memory technology. With a remarkable portfolio of five patents to her name, she continues to push the boundaries of innovation at Samsung Electronics Co., Ltd.
Latest Patents: Among her latest patents is a cutting-edge nonvolatile memory device and a method of programming that employs bit line programming forcing voltage and programming inhibition voltage. This invention comprises multiple memory cells, inclusive of first and second memory cells. The method is characterized by performing initial programming that applies a programming forcing voltage to the bit line of each of the first memory cells, followed by a division of the second memory cells into distinct groups based on their threshold voltage. The subsequent programming involves applying a programming inhibition voltage to not only the bit line of the first memory cells but also to the first group of second memory cells. Notably, the level of the programming forcing voltage is designed to be lower than that of the programming inhibition voltage.
Another significant patent outlines a memory system that includes a memory device, with methods for operating the system. This method entails counting first off-cells and second off-cells among memory cells with respect to different reading voltages, comparing these counts, and determining any potential programming errors within the storage region.
Career Highlights: Hye-Jin Yim’s career at Samsung Electronics Co., Ltd. has been marked by her dedication to pioneering innovative solutions in memory technology. Her depth of knowledge and expertise has significantly contributed to the evolution of nonvolatile memory devices.
Collaborations: Throughout her tenure, Hye-Jin has collaborated closely with talented coworkers, including Sang-Yong Yoon and Seung-Jae Lee. These collaborations have fostered a dynamic environment where inventive ideas can flourish, further advancing the field of memory systems.
Conclusion: Hye-Jin Yim’s contributions to the realm of nonvolatile memory technology demonstrate her exceptional ingenuity and commitment to innovation. With her ongoing work at Samsung Electronics Co., Ltd., she continues to shape the future of memory devices and inspire the next generation of inventors.