Samsung Electronics Co., Ltd.

Hye-Jin Yim

Sang-Yong Yoon

Seung-Jae Lee

Il-Han Park

Sung-won Yun

Kang-Bin Lee

A nonvolatile memory device includes multiple memory cells including first memory cells and second memory cells. A method of programming the nonvolatile memory device includes: performing first programming to apply a programming forcing voltage to a bit line of each of the first memory cells; and dividing the second memory cells into a first cell group, a second cell group, and a third cell group, based on a threshold voltage of the second memory cells after performing the first programming. The method also includes performing second programming to apply a programming inhibition voltage to the bit line of each of the first memory cells and a bit line of each of memory cells of the first cell group. A level of the programming forcing voltage is lower than that of the programming inhibition voltage.

Nonvolatile memory device and method of programming with bit line programming forcing voltage and programming inhibition voltage

A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

Memory system including a memory device, and methods of operating the memory system and memory device

Memory system including a memory device, and methods of operating the memory system and the memory device

A memory device includes a memory cell array including a plurality of memory cells; a counting circuit configured to obtain a counting result by performing a counting operation on data read from the plurality of memory cells; and a control logic configured to perform a data restoring operation based on the counting result without involvement of a memory controller.

Growing community of inventors

Wonju-si, South Korea

Hye-Jin Yim