Hye Hyeon Byeon

Title: Hye Hyeon Byeon: Innovator in Non-Volatile Memory Technology

Introduction

Hye Hyeon Byeon is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. His innovative approach has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Hye Hyeon Byeon holds a patent titled "Method of forming thin layers and method of manufacturing a non-volatile memory device using the same." This patent describes a method for manufacturing a non-volatile memory device that includes forming a gate insulation layer on a semiconductor substrate with a source layer. The process involves creating a silicon nitride layer with a buffer-treated upper surface on the gate insulation layer, where the hardness of the upper surface exceeds that of the silicon nitride layer itself. Additionally, the method outlines the formation of a silicon oxide layer on this treated surface, followed by the alternation of additional silicon nitride and silicon oxide layers to create a stack structure.

Career Highlights

Hye Hyeon Byeon is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to collaborate with other talented professionals in the field, enhancing the company's innovative capabilities.

Collaborations

Some of Hye Hyeon Byeon's coworkers include Il Young Kwon and Jin Ho Bin. Their collaborative efforts contribute to the advancement of technology within the company and the broader semiconductor industry.

Conclusion

Hye Hyeon Byeon is a distinguished inventor whose work in non-volatile memory technology has made a significant impact. His patent reflects his innovative spirit and dedication to advancing semiconductor technology.