Seoul, South Korea

Hwi Yoon

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Samsung Display Co., Ltd., Yonsei University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hwi Yoon. Retrieved from https://idiyas.com/inventor/hwi-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hwi Yoon: Semiconductor Inventor in Seoul

Introduction

Hwi Yoon is an inventor based in Seoul, South Korea. His work includes a patent for a transistor and its manufacturing method. The patent record lists 1 patent and identifies Samsung Display Co., Ltd. and Yonsei University among his affiliations.

Latest Patents

Yoon’s listed patent, “Transistor and Manufacturing Method Thereof,” describes a transistor built on a substrate. It includes a semiconductor layer, an overlapping gate electrode, and source and drain electrodes electrically connected to the semiconductor layer.

The semiconductor layer uses a second material doped into a first material. The first material is a compound represented by the formula XYa, where X is molybdenum, tungsten, zirconium, or rhenium; Y is sulfur, selenium, or tellurium; and a is a natural number of at least one. The second material includes at least one of tungsten, hafnium, tantalum, titanium, platinum, nickel, gallium, or zirconium, and contains an element different from the first material.

Career Highlights

The available information associates Yoon with Samsung Display Co., Ltd. and Yonsei University. His patent focuses on semiconductor materials and transistor fabrication.

Collaborations

Hyungjun Kim is listed as Yoon’s coworker. The provided information does not specify their particular projects or contributions together.

Conclusion

Hwi Yoon’s listed invention addresses transistor structure and manufacturing through a doped semiconductor layer, reflecting his work in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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