Company Filing History:
Years Active: 2023
Title: Huyong Lee: Innovator in Integrated Assemblies and Semiconductor Memory Devices
Introduction: Huyong Lee, an accomplished inventor based in Boise, Idaho, is recognized for his innovative contributions to the field of semiconductor technology. With a strong focus on integrated assemblies, Lee's work has significantly advanced the capabilities of semiconductor memory devices.
Latest Patents: Huyong Lee holds one notable patent for "Integrated assemblies and semiconductor memory devices." This patent details an integrated assembly characterized by a CMOS (Complementary Metal-Oxide-Semiconductor) region featuring fins extending along a specified direction, complemented by gating structures that cross these fins. The innovative circuit arrangement associated with the CMOS region encompasses a pair of gating structures while featuring an intervening region devoid of a gating structure. The patent also outlines conductive structures in proximity to the CMOS region, which are electrically coupled to the circuit arrangement, maintaining a dimension consistency between the conductive structures and the circuit arrangement. This pioneering invention introduces methods for forming integrated assemblies, enriching the semiconductor design landscape.
Career Highlights: Huyong Lee is a key figure at Micron Technology Incorporated, a leading company in semiconductor solutions. His work focuses on developing advanced technologies that enhance memory device performance and integration.
Collaborations: Huyong Lee works alongside talented colleagues such as Yong Mo Yang and Mohd Kamran Akhtar, promoting a collaborative environment that fosters innovation and creativity in the field of semiconductor technology.
Conclusion: As an inventor, Huyong Lee has made significant strides in the semiconductor industry through his innovative patent on integrated assemblies and memory devices. His contributions at Micron Technology Incorporated continue to shape the future of technology, providing valuable advancements in semiconductor performance and efficiency.