Huwen Ding

Title: Huwen Ding and Lithography Quality Optimization

Introduction

Huwen Ding is an inventor based in Beijing, China, associated with the Chinese Academy of Sciences. His patent work addresses lithography quality in metal-dielectric structures, with a focus on how metal-film surface roughness affects the process.

Latest Patents

Ding is named on one patent: “Method and Apparatus for Optimizing Lithography Quality, Electronic Device, Medium and Program Product.” The invention determines a wave-function stray term caused by metal-film surface roughness using the Eigen matrix method and Bloch theorem. It then uses that term in a mathematical model to simulate lithography-quality deviations and produce an analysis curve showing the roughness’s effect. Based on the results, the method proposes reducing the metal film’s surface roughness and/or adding a metal-dielectric multilayer film structure between the mask and air to improve lithography quality. The patent also describes an apparatus, electronic device, computer-readable storage medium, and computer program product for implementing the approach.

Career Highlights

Ding’s listed patent reflects work at the intersection of computational modeling, thin-film materials, and lithography. The disclosed method connects surface characteristics of a metal film to lithography outcomes and uses simulation to guide potential improvements. His reported patent portfolio includes 1 patent.

Collaborations

Ding’s listed coworkers include Lihong Liu and Yayi Wei. The patent information provided identifies the Chinese Academy of Sciences as his associated organization.

Conclusion

Huwen Ding’s patent focuses on modeling and mitigating the effects of metal-film roughness to optimize lithography quality in metal-dielectric structures.