Malvern Link, United Kingdom

Huw David Rees

This inventor holds 1 USPTO granted patent. Top assignee: British Secretary of State for Defence. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huw David Rees. Retrieved from https://idiyas.com/inventor/huw-david-rees

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Huw David Rees: Innovator in Semiconductor Technology

Introduction

Huw David Rees is a notable inventor based in Malvern Link, GB. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Huw David Rees holds a patent for a semiconductor transferred electron device that includes indium phosphide as a major constituent. The patent, titled "Silver, gallium, and oxygen contact for indium phosphide," describes a cathode consisting of oxidized silver gallium. This cathode is designed to contain four times more silver than gallium by weight, with an oxygen content ranging from 2 to 20 atomic percent of the gallium content. This improved device offers high electrical to microwave conversion efficiencies for a large proportion of devices produced in any given batch.

Career Highlights

Huw David Rees is currently employed by the British Secretary of State for Defence. His work focuses on advancing semiconductor technologies that have applications in various defense systems.

Collaborations

Huw has collaborated with notable colleagues, including Leonard David Irving and James Edward Pattison, who have contributed to his research and development efforts.

Conclusion

Huw David Rees is a distinguished inventor whose work in semiconductor technology has the potential to impact various industries. His innovative patent demonstrates his commitment to advancing technology in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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