Company Filing History:
Years Active: 2025
Title: Innovations of Hung-Yu Chang in Magnetic Tunnel Junction Technology
Introduction
Hung-Yu Chang is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of magnetic tunnel junctions (MTJs) for memory applications. His work is essential for advancing magnetoresistive random-access memory (MRAM) technologies.
Latest Patents
Hung-Yu Chang holds 1 patent for his invention titled "Magnetic tunnel junction device and method of forming the same." This patent discloses improved methods of patterning magnetic tunnel junctions for MRAM and semiconductor devices. The method includes several steps, such as depositing a bottom electrode layer over a semiconductor substrate, followed by an MTJ film stack and a top electrode layer. The process involves patterning the top electrode layer, performing etch processes, and depositing spacer layers to form an MRAM cell.
Career Highlights
Hung-Yu Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to contribute to cutting-edge technologies that are pivotal for modern electronics.
Collaborations
Some of his notable coworkers include Harry-Haklay Chuang and Hung Cho Wang. Their collaboration in the field of semiconductor technology has further enhanced the innovation landscape.
Conclusion
Hung-Yu Chang's contributions to magnetic tunnel junction technology exemplify the importance of innovation in the semiconductor industry. His patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role in advancing memory technologies.