Taipei, Taiwan

Hung-Wei Li

This inventor holds 1 USPTO granted patent. Top assignee: Acer Inc.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Wei Li. Retrieved from https://idiyas.com/inventor/hung-wei-li-zgt8dmsr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations of Hung-Wei Li in Nonvolatile Memory Technology.

Introduction

Hung-Wei Li is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of nonvolatile memory technology. His innovative approach has led to the development of a unique erasing method that enhances the efficiency of memory devices.

Latest Patents

Hung-Wei Li holds a patent for an "Erasing method for nonvolatile memory." This invention utilizes forward bias between the source/drain region and body contact to inject majority carriers into the body. It then accelerates these carriers using an electric field between the body and the gate, enabling them to overcome the oxide barrier and effectively erase the nonvolatile memory. He has 1 patent to his name.

Career Highlights

Hung-Wei Li is currently employed at Acer Inc., a leading technology company known for its innovative products. His work at Acer has allowed him to focus on advancing memory technology, contributing to the company's reputation for excellence in the tech industry.

Collaborations

He has collaborated with notable coworkers such as Ting-Chang Chang and Fu-Yen Jian. Their combined expertise has fostered a productive environment for innovation and development in their projects.

Conclusion

Hung-Wei Li's contributions to nonvolatile memory technology exemplify the impact of innovative thinking in the tech industry. His patent and work at Acer Inc. highlight his role as a key player in advancing memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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