Suwon, South Korea

Hung-mo Yang


Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Suwon, KR (1996)
  • Kyungki-do, KR (1998)

Company Filing History:


Years Active: 1996-1998

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2 patents (USPTO):Explore Patents

Title: **Hung-mo Yang: Innovator in Semiconductor Device Technologies**

Introduction

Hung-mo Yang is a distinguished inventor based in Suwon, South Korea, known for his contributions to the field of semiconductor devices. With two patents to his name, Yang has made significant strides in developing methods that enhance the performance and efficiency of semiconductor technologies.

Latest Patents

Yang's recent innovations include two notable patents that advance the fabrication of integrated semiconductor devices. The first patent focuses on methods of forming semiconductor devices that improve field oxide and channel-stop isolation regions. This technique involves implanting first conductivity type impurities into a semiconductor substrate, followed by the formation of field oxide isolation regions. A conductive layer is then patterned to create landing pad layers that serve as masks during the formation of additional channel-stop regions. This method enhances electrical isolation and reduces leakage currents, ultimately improving the refresh characteristics of memory devices.

The second patent outlines a comprehensive method for creating a device isolation film for semiconductor devices. This process involves multiple layers, starting with a pad oxide film, followed by an oxidation buffer layer and an oxidation prevention film. Through careful manipulation and thermal oxidation processes, a robust device isolation film is formed, enhancing the reliability and performance of semiconductor devices.

Career Highlights

Yang is currently affiliated with Samsung Electronics Co., Ltd., where he has been at the forefront of semiconductor research and development. His innovative approaches and methodologies have contributed to the company's reputation for cutting-edge technology and engineering excellence.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues such as Min-wk Hwang and Jae-Ho Kim. These partnerships have allowed for the exchange of ideas and further advancements in semiconductor device technology, demonstrating the importance of teamwork in the innovation process.

Conclusion

Hung-mo Yang stands out as a prominent figure in the semiconductor industry, with patents that not only push the boundaries of technology but also significantly improve device performance. His work at Samsung Electronics Co., Ltd. and collaborations with fellow innovators reinforce the importance of collaboration and innovation in advancing semiconductor technologies.

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