Hung-Ming Yang

Title: Innovations of Hung-Ming Yang

Introduction

Hung-Ming Yang is a notable inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on non-volatile memory solutions, which are crucial for modern electronic devices.

Latest Patents

Hung-Ming Yang holds a patent for a non-volatile SRAM cell featuring split-gate transistors. This innovative design allows the SRAM cell to retain data even when the power is turned off. The patent describes a static random access unit combined with a non-volatile memory unit. This combination enables the SRAM to maintain its random access properties while ensuring data is stored in a non-volatile manner. When power is restored, the data can be automatically retrieved from the non-volatile memory unit back to the static random access unit.

Career Highlights

Hung-Ming Yang is currently employed at Brilliance Semiconductor Inc., where he continues to develop cutting-edge memory technologies. His expertise in semiconductor design has positioned him as a valuable asset in the industry.

Collaborations

He collaborates with fellow inventor Shion-Hau Liaw, contributing to advancements in semiconductor technology.

Conclusion

Hung-Ming Yang's innovative work in non-volatile SRAM technology exemplifies the importance of memory solutions in modern electronics. His contributions continue to influence the field and pave the way for future advancements.