Taoyuan, Taiwan

Hung-Chun Fan

This inventor holds 1 USPTO granted patent. Top assignee: Actron Technology Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Chun Fan. Retrieved from https://idiyas.com/inventor/hung-chun-fan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations of Inventor Hung-Chun Fan

Introduction

Hung-Chun Fan is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of electrical engineering, particularly in the development of rectifier devices for vehicles. His innovative work has led to the creation of a patented technology that enhances vehicle alternators.

Latest Patents

Hung-Chun Fan holds a patent for a rectifier device, generator device, and powertrain for vehicles. This patent includes a rectifying element designed for vehicle alternators, featuring an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD incorporates a lateral conducting silicide structure alongside a field effect junction structure, providing improved efficiency in rectification.

Career Highlights

Hung-Chun Fan is associated with Actron Technology Corporation, where he applies his expertise in electrical engineering to develop advanced technologies. His work has been instrumental in enhancing the performance and reliability of vehicle power systems.

Collaborations

Hung-Chun Fan collaborates with talented individuals such as Hong-Dao Li and Yu-Jen Shen, contributing to innovative projects within the company.

Conclusion

Hung-Chun Fan's contributions to the field of electrical engineering, particularly through his patented innovations, demonstrate his commitment to advancing vehicle technology. His work continues to influence the industry and pave the way for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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