Company Filing History:
Years Active: 2002
Title: Innovations of Inventor Hung-Chen Sung
Introduction
Hung-Chen Sung is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced gate structures for MOSFET applications. His innovative methods have the potential to enhance the performance of electronic devices.
Latest Patents
Hung-Chen Sung holds a patent for a method of forming a squared-off, vertically oriented polysilicon spacer gate. This method involves creating a rectangular or near-rectangular polysilicon sidewall structure, which is essential for ultra-narrow MOSFET gate electrodes. The process utilizes a sacrificial oxide step and includes several stages of deposition and etching to achieve the desired sidewall profile. His patent is particularly useful in split-gate flash memory applications.
Career Highlights
Hung-Chen Sung is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has contributed to advancements in manufacturing techniques that improve the efficiency and effectiveness of semiconductor devices.
Collaborations
He has collaborated with notable colleagues such as Han-Ping Chen and Cheng-Yuan Hsu, who have also made significant contributions to the field of semiconductor technology.
Conclusion
Hung-Chen Sung's innovative methods and patents reflect his expertise and commitment to advancing semiconductor technology. His contributions are vital for the ongoing development of efficient electronic devices.