Hsinchu, Taiwan

Hung-chang Yu

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-chang Yu. Retrieved from https://idiyas.com/inventor/hung-chang-yu-9b6seywt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 1.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024-2026

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4 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung-chang Yu

Introduction

Hung-chang Yu is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 4 patents. His work focuses on enhancing the efficiency and performance of memory technologies.

Latest Patents

One of his latest patents is titled "Circuit and method to enhance efficiency of memory." This invention involves a method that includes providing a modulation circuit and a driving circuit. The modulation circuit is configured to generate a temperature-dependent voltage and supply it to the driving circuit. The method determines the operation mode of a memory array and provides a first current corresponding to a positive temperature coefficient during a read operation. Additionally, it provides a second current corresponding to a negative temperature coefficient during a write operation.

Another significant patent is "Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device." This method controls a memory cell in a memory device, which includes a switch, a memory element, and a negative resistance device in series. The method determines whether the memory cell is in a read operation and applies a read voltage greater than a predetermined threshold voltage of the negative resistance device during the read operation.

Career Highlights

Hung-chang Yu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing memory device efficiency.

Collaborations

He collaborates with fellow inventor Wen-Chin Lin, contributing to the development of cutting-edge memory technologies.

Conclusion

Hung-chang Yu's contributions to memory device technology through his innovative patents highlight his expertise and commitment to advancing the field. His work continues to influence the development of efficient memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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