Company Filing History:
Years Active: 2024-2025
Title: Innovations of Inventor Hung-chang Yu
Introduction
Hung-chang Yu is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work focuses on enhancing the efficiency and performance of memory technologies.
Latest Patents
One of his latest patents is titled "Circuit and method to enhance efficiency of memory." This invention involves a method that includes providing a modulation circuit and a driving circuit. The modulation circuit is configured to generate a temperature-dependent voltage and supply it to the driving circuit. The method determines the operation mode of a memory array and provides a first current corresponding to a positive temperature coefficient during a read operation. Additionally, it provides a second current corresponding to a negative temperature coefficient during a write operation.
Another significant patent is "Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device." This method controls a memory cell in a memory device, which includes a switch, a memory element, and a negative resistance device in series. The method determines whether the memory cell is in a read operation and applies a read voltage greater than a predetermined threshold voltage of the negative resistance device during the read operation.
Career Highlights
Hung-chang Yu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing memory device efficiency.
Collaborations
He collaborates with fellow inventor Wen-Chin Lin, contributing to the development of cutting-edge memory technologies.
Conclusion
Hung-chang Yu's contributions to memory device technology through his innovative patents highlight his expertise and commitment to advancing the field. His work continues to influence the development of efficient memory solutions.