Suzhou, China

Huiwen Hu

This inventor holds 1 USPTO granted patent. Top assignee: Faraday Technology Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huiwen Hu. Retrieved from https://idiyas.com/inventor/huiwen-hu-9t07ji0a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Huiwen Hu and a Bandgap Start-Up Circuit

Introduction

Huiwen Hu is an inventor associated with Suzhou, China, and Faraday Technology Corporation. The available information credits Hu with one patent.

Latest Patents

Hu’s listed patent is “Bandgap Device and Start-Up Circuit Thereof.” It describes a start-up circuit for a bandgap device, using transistors, a delay circuit, a switch circuit, and a startup switch. At power-up, the startup switch supplies bias to an internal startup node. Once the bandgap circuit completes startup, its internal bias voltage turns off the startup switch and the first and second transistors, allowing the start-up circuit to consume no current.

Career Highlights

The provided information associates Hu with Faraday Technology Corporation and identifies one patent attributed to him. The patent focuses on reducing start-up circuit current after a bandgap circuit has started.

Collaborations

Hu’s listed coworker is Xiao-Dong Fei, who is identified as a woman. The available information does not specify her role in the patent or describe their collaboration.

Conclusion

Huiwen Hu’s listed invention addresses bandgap circuit start-up and is designed to stop consuming current after the circuit reaches its operating state.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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