This inventor holds 1 USPTO granted patent. Top assignee: Faraday Technology Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2026
Title: Huiwen Hu and a Bandgap Start-Up Circuit
Introduction
Huiwen Hu is an inventor associated with Suzhou, China, and Faraday Technology Corporation. The available information credits Hu with one patent.
Latest Patents
Hu’s listed patent is “Bandgap Device and Start-Up Circuit Thereof.” It describes a start-up circuit for a bandgap device, using transistors, a delay circuit, a switch circuit, and a startup switch. At power-up, the startup switch supplies bias to an internal startup node. Once the bandgap circuit completes startup, its internal bias voltage turns off the startup switch and the first and second transistors, allowing the start-up circuit to consume no current.
Career Highlights
The provided information associates Hu with Faraday Technology Corporation and identifies one patent attributed to him. The patent focuses on reducing start-up circuit current after a bandgap circuit has started.
Collaborations
Hu’s listed coworker is Xiao-Dong Fei, who is identified as a woman. The available information does not specify her role in the patent or describe their collaboration.
Conclusion
Huiwen Hu’s listed invention addresses bandgap circuit start-up and is designed to stop consuming current after the circuit reaches its operating state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile