South Bend, IN, United States of America

Huili Xing

This inventor holds 2 USPTO granted patents. Top assignees: University of California, University of Notre Dame Du Lac. Active years: 2009-2014.


% Patents Active = 50.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2009-2014

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2 patents (USPTO):Explore Patents

Title: Huili Xing: Innovator in Semiconductor Technology

Introduction

Huili Xing is a prominent inventor based in South Bend, IN (US), known for his significant contributions to the field of semiconductor technology. With a total of 2 patents, he has made remarkable advancements that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Huili Xing's latest patents include a "Compositionally graded heterojunction semiconductor device and method of making same." This invention provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositionally graded semiconductor device features a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge, which spreads according to the volume charge density in a polar direction. This innovative design ensures substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.

Another notable patent is for "Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same." This invention involves novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures that are grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to AlGaN. The fabricated polarization-doped field effect transistor (PolFET) demonstrated impressive performance under DC and RF conditions, achieving a current density of 850 mA/mm and transconductance of 93 mS/mm. The PolFETs outperform comparable MESFETs with impurity-doped channels, making them suitable for high microwave power applications.

Career Highlights

Huili Xing has worked at prestigious institutions such as the University of California and the University of Notre Dame Du Lac. His work has significantly impacted the semiconductor industry, particularly in the development of advanced materials and devices.

Collaborations

Throughout his career, Huili Xing has collaborated with notable colleagues, including Debdeep Jena and Umesh Kumar Mishra. These collaborations have furthered research and innovation in semiconductor technology.

Conclusion

Huili Xing's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, paving the way for future innovations.

Profile summary based on public USPTO records.
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