Hui Sik Kim

Title: Hui Sik Kim - Innovator in Epitaxial Layer Formation

Introduction

Hui Sik Kim is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the formation of epitaxial layers. His innovative methods have the potential to enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Hui Sik Kim holds a patent for a "Method for forming epitaxial layer at low temperature." This patent describes a process that involves transferring a substrate into an epitaxial chamber and performing an epitaxial process to create an epitaxial layer on the substrate. The method includes heating the substrate to a temperature of about 700°C or less and injecting silicon gas into the chamber while maintaining a pressure of about 300 Torr or less. The process is designed to form both a first and a second epitaxial layer, with purging steps in between to ensure optimal conditions.

Career Highlights

Hui Sik Kim is associated with Eugene Technology Co., Ltd., where he applies his expertise in semiconductor technology. His work focuses on developing methods that improve the quality and performance of semiconductor devices. With a patent portfolio that includes 1 patent, he continues to push the boundaries of innovation in his field.

Collaborations

Hui Sik Kim has collaborated with notable colleagues such as Doo Yeol Ryu and Seung Woo Shin. Their combined efforts contribute to advancements in semiconductor technology and the development of new methodologies.

Conclusion

Hui Sik Kim is a prominent figure in the field of semiconductor innovation, with a focus on low-temperature epitaxial layer formation. His contributions are paving the way for advancements in semiconductor manufacturing processes.