Hui-Ming Chen

Title: Hui-Ming Chen: Innovator in Metallization Processes

Introduction

Hui-Ming Chen is a notable inventor based in Miao-Li Hsien, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the metallization process. His innovative approach addresses critical challenges in the industry, showcasing his expertise and dedication to advancing technology.

Latest Patents

Hui-Ming Chen holds a patent for a method titled "Method for removing photoresist in metallization process." This invention provides a solution for completely removing photoresist residue that remains on the surface of a metal layer, thereby preventing corrosion. The method involves performing a heat treatment after patterning the metal layer and before removing the photoresist layer. This process effectively removes materials that could corrode the metal layer. Following this, the photoresist layer is removed using a wet strip process instead of an oxygen plasma process. This innovative approach ensures that the photoresist residue does not oxidize into an insoluble oxide, allowing for complete removal.

Career Highlights

Hui-Ming Chen is associated with United Integrated Circuits Corporation, where he applies his expertise in semiconductor processes. His work has been instrumental in enhancing the efficiency and reliability of metallization techniques in the industry. His contributions have not only advanced the technology but have also set new standards for quality in semiconductor manufacturing.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Hui-Ming Chen's innovative methods in the metallization process reflect his commitment to improving semiconductor manufacturing. His patent demonstrates a significant advancement in the field, ensuring better quality and efficiency in the production of electronic components.