Hui-Hsin Hsu

Title: Innovations of Hui-Hsin Hsu

Introduction

Hui-Hsin Hsu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Hsu's work focuses on advancing semiconductor devices and their manufacturing methods.

Latest Patents

Hsu's latest patents include a semiconductor device and manufacturing method. This innovative semiconductor device comprises a substrate and a gate structure. The gate structure is positioned on the substrate and includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is placed on the titanium nitride barrier layer, with its thickness ranging from twice to three times that of the titanium nitride barrier layer. Additionally, the middle layer, which consists of titanium and nitrogen, is directly connected to both the titanium aluminide layer and the titanium nitride barrier layer. Notably, the concentration of nitrogen in the middle layer decreases gradually in a vertical direction towards the interface with the titanium aluminide layer.

Career Highlights

Hui-Hsin Hsu is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in developing advanced semiconductor technologies that enhance device performance and reliability.

Collaborations

Hsu has collaborated with several talented individuals in his field, including Huan-Chi Ma and Chien-Wen Yu. These collaborations have contributed to the successful development of innovative semiconductor solutions.

Conclusion

Hui-Hsin Hsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and manufacturing methods.