Shaanxi, China

Hui Fu

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hui Fu. Retrieved from https://idiyas.com/inventor/hui-fu-8p70ac6y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Hui Fu - Innovator in Pseudo Dual-Port Memory Technology

Introduction

Hui Fu is a notable inventor based in Shaanxi, China. She has made significant contributions to the field of memory technology, particularly with her innovative work on pseudo dual-port memory devices. Her expertise and creativity have led to advancements that enhance the functionality of microprocessors and microcontrollers.

Latest Patents

Hui Fu holds a patent for a pseudo dual-port memory device. This invention provides an internal data RAM for microprocessors and outlines a method for operating a memory device. The memory device comprises a first part with single-port memory cells and a second part with dual-port memory cells. The method for operating the memory device includes accessing the single-port memory during non-conflicting access and the dual-port memory during conflicting access.

Career Highlights

Hui Fu is currently employed at Infineon Technologies AG, where she continues to develop innovative memory solutions. Her work has been instrumental in advancing the capabilities of memory devices used in various applications.

Collaborations

Hui Fu collaborates with talented colleagues, including Shuwei Guo and Lei Zhang. Their combined expertise fosters a creative environment that drives innovation in memory technology.

Conclusion

Hui Fu's contributions to the field of memory technology, particularly through her patent on pseudo dual-port memory, highlight her role as an influential inventor. Her work at Infineon Technologies AG and collaborations with her coworkers further emphasize her commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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