Huarui Liu

Title: Huarui Liu: Innovator in Trench Field Effect Transistor Technology

Introduction

Huarui Liu is a prominent inventor based in Chongqing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench field effect transistors. His innovative approach has led to advancements that enhance device performance and efficiency.

Latest Patents

Huarui Liu holds a patent for a trench field effect transistor structure comprising an epitaxial layer and its manufacturing method. The patent outlines a process that includes providing a substrate, forming an epitaxial layer, and creating a device trench within the epitaxial layer. The manufacturing method also involves the formation of various layers, including a shielding dielectric layer, a shielding gate layer, and a gate layer. This self-alignment process allows for a reduction in cell pitch, thereby improving cell density and reducing channel resistance in devices.

Career Highlights

Huarui Liu is currently employed at China Resources Microelectronics (Chongqing) Co., Ltd. His work focuses on advancing semiconductor technologies and improving manufacturing processes. His innovative contributions have positioned him as a key figure in the industry.

Collaborations

Huarui Liu has collaborated with notable colleagues, including Xin Yao and Wei Jiao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Huarui Liu's work in trench field effect transistor technology exemplifies the spirit of innovation in the semiconductor industry. His contributions continue to influence advancements in device performance and manufacturing methods.