Company Filing History:
Years Active: 2022
Title: Huanlong Lui: Innovator in Magnetic Random Access Memory Technology
Introduction
Huanlong Lui is a prominent inventor based in Sunnyvale, CA, known for his contributions to the field of magnetic random access memory (MRAM) technology. With a focus on enhancing thermal stability in MRAM applications, Lui has made significant strides in the development of advanced materials and structures.
Latest Patents
Huanlong Lui holds a patent titled "High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications." This patent describes a magnetic tunnel junction (MTJ) where a free layer interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to achieve interfacial perpendicular magnetic anisotropy (PMA). The Mox layer is designed with a non-stoichiometric oxidation state to minimize parasitic resistance. It incorporates a dopant that fills vacant lattice sites, effectively blocking oxygen diffusion through the Mox layer. This innovation preserves interfacial PMA and ensures high thermal stability at process temperatures up to 400°C. Various methods for forming the doped Mox layer are outlined, including deposition in a reactive environment and ion implantation of the dopant.
Career Highlights
Huanlong Lui is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to push the boundaries of MRAM technology. His work has been instrumental in advancing the performance and reliability of memory devices, making them more suitable for a wide range of applications.
Collaborations
Lui collaborates with talented professionals in his field, including Guenole Jan and Jodi Mari Iwata. These collaborations enhance the innovative potential of his projects and contribute to the overall success of their research endeavors.
Conclusion
Huanlong Lui's contributions to MRAM technology exemplify the impact of innovative thinking in the field of memory devices. His patent on high thermal stability through oxide doping showcases his commitment to advancing technology and improving device performance.