Dallas, TX, United States of America

Huang-Chun Wen

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Plano, TX (US) (2014)
  • Dallas, TX (US) (2012 - 2022)

Company Filing History:


Years Active: 2012-2022

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5 patents (USPTO):Explore Patents

Title: Innovations of Huang-Chun Wen in Ferroelectric Integrated Circuits

Introduction

Huang-Chun Wen is a notable inventor based in Dallas, TX, recognized for his significant contributions to the field of integrated circuits, particularly in ferroelectric technologies. With five patents to his name, his innovative work has enhanced the performance of electronic devices, making them more efficient and reliable.

Latest Patents

Huang-Chun Wen's most recent patents include:

1. **Low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance**: This patent focuses on curing a passivation layer applied to the surface of a ferroelectric integrated circuit. The primary goal is to improve the polarization characteristics of the ferroelectric structures. The method involves applying a passivation layer, such as polyimide, following the fabrication of active devices. The layer is cured through exposure to a high temperature, which remains below the Curie temperature of the ferroelectric material, for a short duration, typically around ten minutes. Employing variable frequency microwave energy for curing enhances the tensile stress state of the passivation layer and imparts compressive stress on the underlying ferroelectric material. Additional polarization of the ferroelectric material prior to curing further enhances its polarization.

2. **Integrated circuit with integrated decoupling capacitors**: This patent discusses the use of ferroelectric capacitor structures for integrated decoupling capacitors. The innovative design includes two or more ferroelectric capacitors connected in series between voltage nodes, reducing the applied voltage across each capacitor. This configuration allows for the utilization of rough ferroelectric dielectric materials, such as PZT deposited by MOCVD. The matched construction and uniform polarity across the series-connected capacitors are crucial in minimizing the maximum voltage, thereby lowering the risk of dielectric breakdown.

Career Highlights

Huang-Chun Wen is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of technology through his work on ferroelectric integrated circuits. His innovations have made significant contributions to the functionality and effectiveness of modern electronic devices.

Collaborations

Throughout his career, Huang-Chun has collaborated with esteemed colleagues, including Scott Robert Summerfelt and John Anthony Rodriguez. These collaborations have fostered a dynamic environment for innovation and problem-solving, leading to advancements in their shared research interests.

Conclusion

Huang-Chun Wen's pioneering work in the field of ferroelectric integrated circuits has not only earned him multiple patents but has also positioned him as a key figure in advancing electronic technology. Through his innovative approaches and collaborative efforts, he continues to inspire future innovations in the industry.

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