Company Filing History:
Years Active: 2019
Title: Huajie Ke: Innovator of III-V Heterojunction Field Effect Transistor
Introduction
Huajie Ke, an accomplished inventor based in Hangzhou, China, has made significant contributions to the field of semiconductor technology. With a focus on innovation, he holds a patent for a novel III-V heterojunction field effect transistor that showcases distinct advantages in performance and reliability.
Latest Patents
Huajie Ke's most prominent patent includes the III-V heterojunction field effect transistor. This innovative device comprises a substrate layer, a first semiconductor layer with a higher bandgap than the second semiconductor layer, drain and source electrodes, a gate electrode, and multiple dielectric layers. The invention smartly leverages the combination of the two semiconductor layers to create a heterostructure. Notably, the thickness of the first semiconductor layer is controlled to not exceed the critical thickness required for forming a two-dimensional electron gas (2DEG) in the heterojunction channel, leading to the efficient depletion of natural 2DEG. This design results in a straightforward structural configuration and a simplified preparation process, while ensuring stability and high reliability.
Career Highlights
Huajie Ke is associated with Hangzhou Dianzi University, where he engages in research and development within the semiconductor sector. His academic role not only highlights his commitment to advancing technology but also places him at the intersection of education and innovation.
Collaborations
Throughout his career, Huajie has collaborated with esteemed colleagues such as Zhihua Dong and Zhiqun Cheng. Their collective efforts exemplify the spirit of innovation and teamwork in tackling complex technological challenges.
Conclusion
In conclusion, Huajie Ke stands out as a notable inventor in the field of semiconductor technology. His patent for the III-V heterojunction field effect transistor reflects a dedicated pursuit of innovation, with practical benefits in design and application. As he continues to contribute to research at Hangzhou Dianzi University, his work paves the way for future advancements in this critical area of technology.