Fremont, CA, United States of America

Huai-Yu Hsiao

This inventor holds 2 USPTO granted patents. Top assignee: Lam Research Corporation. Active years: 2017-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huai-Yu Hsiao. Retrieved from https://idiyas.com/inventor/huai-yu-hsiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2017-2019

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Huai-Yu Hsiao: Innovator in Anisotropic Tungsten Etching

Introduction

Huai-Yu Hsiao is a notable inventor based in Fremont, CA (US). He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of tungsten etching. With a total of 2 patents, Hsiao's work has advanced the techniques used in the fabrication of microelectronic devices.

Latest Patents

One of Huai-Yu Hsiao's latest patents is titled "Method and apparatus for anisotropic tungsten etching." This innovative method involves cyclic treatment of tungsten surfaces with chlorine plasma and oxygen-containing radicals. The process is designed to etch tungsten-containing materials, such as doped or undoped tungsten metal, while selectively protecting vertical surfaces from etching. The treatment with chlorine plasma is performed while the substrate is electrically biased, which results in the predominant etching of horizontal surfaces. The use of oxygen-containing radicals serves to passivate the substrate's surface, thereby safeguarding the vertical surfaces, such as the sidewalls of recessed features. This method can be repeated to achieve the desired material removal and can be performed selectively in the presence of dielectric materials like silicon oxide, silicon nitride, and silicon oxynitride.

Career Highlights

Huai-Yu Hsiao is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work at Lam Research has positioned him as a key player in the development of advanced etching techniques that are crucial for modern microelectronics.

Collaborations

Hsiao has collaborated with several talented individuals in his field, including Zhongkui Tan and Qian Fu, who is a woman. These collaborations have contributed to the innovative advancements in tungsten etching technologies.

Conclusion

Huai-Yu Hsiao's contributions to the field of semiconductor manufacturing, particularly through his patents on anisotropic tungsten etching, highlight his role as a significant inventor. His work continues to influence the development of microelectronic devices, showcasing the importance of innovation in this rapidly evolving industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…