Company Filing History:
Years Active: 2025
Title: Huai-Tei Yang: Innovator in Semiconductor Technology
Introduction
Huai-Tei Yang is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent that enhances semiconductor structures.
Latest Patents
Yang holds a patent for a semiconductor structure with a source/drain multi-layer structure and a method for forming the same. This patent describes a semiconductor structure that includes a gate structure formed over a fin structure, along with a gate spacer layer on the sidewall surface of the gate structure. The structure also features a source/drain (S/D) epitaxial layer adjacent to the gate structure, a dielectric spacer layer on the S/D epitaxial layer, and a contact plug barrier over the S/D epitaxial layer. The contact plug is surrounded by the contact plug barrier and is separated from the gate spacer layer by the dielectric spacer layer.
Career Highlights
Yang is currently associated with Parabellum Strategic Opportunities Fund LLC, where he continues to work on advancing semiconductor technologies. His expertise in this area has positioned him as a valuable asset in the industry.
Collaborations
Yang collaborates with talented individuals such as Chun-Chieh Wang and Yu-Ting Lin, who contribute to the innovative projects at their company.
Conclusion
Huai-Tei Yang's work in semiconductor technology exemplifies the impact of innovation in the field. His patent reflects a significant advancement that could influence future developments in semiconductor structures.