The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 17, 2024
Parabellum Strategic Opportunities Fund Llc, Wilmington, DE (US);
Chun-Chieh Wang, Kaohsiung, TW;
Yu-Ting Lin, Tainan, TW;
Yueh-Ching Pai, Taichung, TW;
Shih-Chieh Chang, Taipei, TW;
Huai-Tei Yang, Hsin-Chu, TW;
Parabellum Strategic Oppurtunities Fund LLC, Austin, TX (US);
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a gate spacer layer formed on a sidewall surface of the gate structure. The semiconductor structure includes a source/drain (S/D) epitaxial layer formed adjacent to the gate structure, and a dielectric spacer layer formed on the S/D epitaxial layer. The semiconductor structure includes a contact plug barrier formed over the S/D epitaxial layer, and a contact plug surrounding by the contact plug barrier, wherein the contact plug is separated from the gate spacer layer by the dielectric spacer layer and the contact plug barrier.