Hsueh Yi Che

Title: Hsueh Yi Che: Innovator in Contact Plug Structures

Introduction

Hsueh Yi Che is a notable inventor based in Hualien, Taiwan. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 2 patents, his work focuses on enhancing the efficiency and performance of memory structures.

Latest Patents

Hsueh Yi Che's latest patents include a "Contact Plug Structure" and a "Method for Preparing a Contact Plug Structure." Both inventions describe a contact plug structure designed for checkerboard dynamic random access memory. The structure comprises a body portion, two leg portions connected to the body portion, and a dielectric block positioned between the leg portions. Each leg portion is electrically connected to a deep trench capacitor arranged in an S-shape manner. The materials used for the body and leg portions include polysilicon, doped polysilicon, tungsten, copper, and aluminum, while the dielectric block is made from borophosphosilicate glass. The contact plug can be prepared using a dual-damascene technique, which effectively reduces bit line coupling by decreasing the overlapped area between the contact plug structure and a word line.

Career Highlights

Hsueh Yi Che is currently associated with Promos Technologies, Inc., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing memory structure designs, contributing to improved performance in electronic devices.

Collaborations

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Conclusion

Hsueh Yi Che's contributions to the field of dynamic random access memory through his innovative patents highlight his role as a key inventor in semiconductor technology. His work continues to influence advancements in memory structures, showcasing the importance of innovation in this critical area.