Hsueh-Rong Chang

Title: Hsueh-Rong Chang: Innovator in Power Semiconductor Technology

Introduction

Hsueh-Rong Chang is a notable inventor based in Hermosa Beach, CA (US). He has made significant contributions to the field of power semiconductor technology, holding 2 patents that showcase his innovative approach to electronic components.

Latest Patents

Chang's latest patents include advancements in power semiconductor packages. One of his patents describes a power semiconductor package with a conductive clip. This package features an insulated-gate bipolar transistor (IGBT) on a package substrate, which includes solderable front metal (SFM) coated emitter segments connected to the IGBT's emitter. The design also incorporates a conductive clip that connects these emitter segments to an emitter pad on the substrate. Additionally, the package includes a gate pad coupled to the IGBT's gate, a collector pad situated under the IGBT, and terminals routed to the respective pads.

Another patent by Chang focuses on an IGBT power semiconductor package that also utilizes a conductive clip. Similar to his previous patent, this design includes SFM coated emitter segments and a conductive clip that links these segments to an emitter pad. The package is designed to enhance the efficiency and reliability of power semiconductor applications.

Career Highlights

Hsueh-Rong Chang is associated with International Rectifier Corporation, a company known for its expertise in power management technology. His work at the company has allowed him to contribute to cutting-edge developments in semiconductor technology.

Collaborations

Due to space constraints, the collaborations section has been omitted.

Conclusion

Hsueh-Rong Chang's innovative patents in power semiconductor technology reflect his expertise and commitment to advancing the field. His contributions continue to influence the development of efficient electronic components.