Hsiu-Lan Li

Title: Hsiu-Lan Li: Innovator in Semiconductor Technology

Hsiu-Lan Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of photoresist removal methods. His innovative approach has implications for the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Hsiu-Lan Li holds a patent for a "Soft ashing method for removing fluorinated photoresists layers." This method addresses the challenge of removing a partially fluorinated photoresist layer from a semiconductor substrate. The process begins with the formation of a partially fluorinated photoresist layer, which consists of a fluorinated surface layer and an underlying non-fluorinated remainder layer. The fluorinated surface layer is removed using a first etch method that employs an oxygen-containing plasma at a radio frequency power not exceeding 500 watts and a temperature below 120 degrees centigrade. Finally, the underlying non-fluorinated layer is eliminated through a second etch method. This innovative technique enhances the efficiency of semiconductor processing.

Career Highlights

Hsiu-Lan Li is currently associated with Vanguard International Semiconductor Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in improving manufacturing processes and ensuring higher quality in semiconductor products.

Collaborations

Hsiu-Lan Li collaborates with Rong-Wu Chien, who is also a key figure in the semiconductor industry. Their partnership exemplifies the importance of teamwork in driving innovation and achieving breakthroughs in technology.

Conclusion

Hsiu-Lan Li's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a leading inventor in the field. His work not only advances the industry but also sets a foundation for future innovations in semiconductor manufacturing.