Taichung, Taiwan

Hsiu-Ju Yang

This inventor holds 1 USPTO granted patent. Top assignee: Elan Microelectronics Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiu-Ju Yang. Retrieved from https://idiyas.com/inventor/hsiu-ju-yang-0poabsgw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hsiu-Ju Yang: Innovator in Capacitive Touch Panel Technology

Introduction

Hsiu-Ju Yang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of capacitive touch technology. His innovative approach has led to the development of a unique sensing method that enhances the functionality of touch panels.

Latest Patents

Hsiu-Ju Yang holds a patent for a "Sensing method and circuit for a capacitive touch panel." This invention involves a method for charging a measure capacitor and setting the voltage across a mutual capacitor at the intersection of two traces on the capacitive touch panel. When the intersection is touched, the capacitance value of the mutual capacitor changes, allowing for the detection of touch through the voltage of the measure capacitor.

Career Highlights

Hsiu-Ju Yang is currently employed at Elan Microelectronics Corporation, where he continues to work on advancements in touch panel technology. His expertise in this area has positioned him as a valuable asset to the company.

Collaborations

Hsiu-Ju Yang collaborates with talented colleagues, including Chun-Chung Huang and I-Shu Lee, who contribute to the innovative projects at Elan Microelectronics Corporation.

Conclusion

Hsiu-Ju Yang's contributions to capacitive touch panel technology exemplify the spirit of innovation. His patent and ongoing work at Elan Microelectronics Corporation highlight his commitment to advancing technology in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…