Carmel, NY, United States of America

Hsing Jen Wann


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Hsing Jen Wann: Innovator in High-Speed Logic Gates

Introduction

Hsing Jen Wann is a notable inventor based in Carmel, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of materials for high-speed logic gates. His innovative approach has led to advancements that enhance the performance of field-effect transistors (FETs).

Latest Patents

Hsing Jen Wann holds a patent for "Reduced dielectric constant spacer materials integration for high speed logic gates." This patent describes a FET transistor that features a gate positioned between a source and a drain, with a gate dielectric layer beneath the gate. The invention includes a spacer on the side of the gate, which utilizes a reduced dielectric constant (k) material. The spacer's dielectric constant may be less than 3.85 or less than 7.0 (nitride), but greater than 3.85 (oxide). The spacer is designed to be selectively etched relative to the gate dielectric layer and may be porous, with a thin layer applied to prevent moisture absorption. The materials used for the spacer include options such as Black Diamond, Coral, TERA, and Blok type materials. Pores in the spacer material can be created by exposing the spacers to an oxygen plasma.

Career Highlights

Hsing Jen Wann is currently employed at International Business Machines Corporation (IBM), where he continues to work on innovative technologies that push the boundaries of semiconductor design. His expertise in materials science and engineering has positioned him as a key player in the development of advanced electronic components.

Collaborations

Throughout his career, Hsing Jen Wann has collaborated with talented colleagues, including Michael P. Belyansky and Joyce C. Liu. These partnerships have fostered a creative environment that encourages the exchange of ideas and the pursuit of groundbreaking innovations.

Conclusion

Hsing Jen Wann's contributions to the field of high-speed logic gates exemplify the impact of innovative thinking in technology. His work not only advances semiconductor materials but also enhances the performance of electronic devices. The future of high-speed logic technology looks promising with inventors like Hsing Jen Wann leading the way.

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