Company Filing History:
Years Active: 2006
Title: Hsing-Huang Hsieh: Innovator in Semiconductor Technology
Introduction
Hsing-Huang Hsieh is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of DMOS devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.
Latest Patents
Hsing-Huang Hsieh holds a patent for a "Termination structure of DMOS device." In one embodiment of the invention, a semiconductor device set includes at least one trench-typed MOSFET and a trench-typed termination structure. The trench-typed MOSFET features a trench profile and includes a gate oxide layer within the trench profile, along with a polysilicon layer on the gate oxide layer. The trench-typed termination structure also has a trench profile and includes an oxide layer in the trench profile. A termination polysilicon layer with discrete features separates the termination polysilicon layer. An isolation layer covers the termination polysilicon layer, filling the discrete features. The trench-typed MOSFET and the trench-typed termination structure may be formed on a DMOS device that includes an N+ silicon substrate, an N epitaxial layer on the N+ silicon substrate, and a P epitaxial layer on the N epitaxial layer. The trench profiles of both the trench-typed MOSFET and the trench-typed termination structure may penetrate through the P epitaxial layer into the N epitaxial layer.
Career Highlights
Hsing-Huang Hsieh is currently employed at Mosel Vitelic Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of DMOS devices.
Collaborations
Hsing-Huang Hsieh has collaborated with notable colleagues, including Chiao-Shun Chuang and Chien-Ping Chang. These collaborations have contributed to the innovative advancements in their shared field of expertise.
Conclusion
Hsing-Huang Hsieh is a distinguished inventor whose contributions to semiconductor technology have made a significant impact. His patent for the termination structure of DMOS devices exemplifies his innovative spirit and technical prowess.
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