Hsin-Wei Lee

Title: Hsin-Wei Lee and Micro-LED Innovation.

Introduction

Hsin-Wei Lee is an inventor based in Tainan, Taiwan, and is associated with Mikro Mesa Technology Co., Ltd. His patent work includes a micro light-emitting diode device designed with a layered structure and a transparent top electrode.

Latest Patents

Lee is named on one patent: Micro light-emitting diode device. The invention describes a micro-LED built on a substrate, with a p-type GaN layer, an active layer, and an n-type III-nitride layer. An n-doped AlN layer sits above and contacts the n-type layer, while a transparent top electrode covers and contacts the AlN layer. The AlN layer has a lower refractive index than the n-type III-nitride layer, and the combined thickness of the n-type layer and AlN layer exceeds the combined thickness of the active layer and p-type GaN layer. Lee’s patent portfolio includes 1 patent.

Career Highlights

Lee’s documented innovation focuses on micro-LED device architecture. His work is associated with Mikro Mesa Technology Co., Ltd., a company involved in developing micro-LED technology.

Collaborations

The available information connects Lee’s patent work with Mikro Mesa Technology Co., Ltd. It does not identify specific co-inventors or other collaborators.

Conclusion

Hsin-Wei Lee’s patented micro-LED design combines semiconductor layers and a transparent electrode in a carefully specified structure, reflecting his contribution to display-device innovation.