Company Filing History:
Years Active: 2016
**Title: Exploring the Innovations of Inventor Hsin-Ming Cheng**
Introduction
Hsin-Ming Cheng, an accomplished inventor based in Toufen, Taiwan, has made significant contributions to the field of semiconductor technology. With a focus on creating innovative materials, Cheng has been pivotal in advancing the capabilities of transistors through his research and patent work.
Latest Patents
Cheng holds a patent for a novel p-type metal oxide semiconductor material and transistor. This invention comprises AlGeO, where the composition is defined by the parameters 0 < x ≤ 0.6 and 1.0 ≤ y ≤ 2.0. The p-type metal oxide semiconductor material is particularly valuable as it can be integrated into transistors, which consist of a gate electrode, a channel layer, and source and drain electrodes. This innovative design allows for improved performance and efficiency in electronic devices.
Career Highlights
Hsin-Ming Cheng works at the Industrial Technology Research Institute, an esteemed research organization dedicated to advancing technology and innovation. His work in semiconductor materials highlights his commitment to enhancing electronic device capabilities, making significant strides in this critical industry.
Collaborations
Cheng collaborates with notable colleagues such as Shan-Haw Chiou and Tzu-Chi Chou. Together, they contribute to the research community by exploring new frontiers in semiconductor technology and fostering knowledge sharing within their field.
Conclusion
Hsin-Ming Cheng's contributions to semiconductor materials, specifically through his patented innovations, exemplify the impact of dedicated research and collaboration. As he continues his work at the Industrial Technology Research Institute, Cheng is likely to play a vital role in shaping the future of electronic technologies.