The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Dec. 29, 2015
Industrial Technology Research Institute, Hsinchu, TW;
Shan-Haw Chiou, Baoshan Township, TW;
Tzu-Chi Chou, Hsinchu, TW;
Wen-Hsuan Chao, Zhunan Township, TW;
Hsin-Ming Cheng, Toufen, TW;
Mu-Tung Chang, Zhubei, TW;
Tien-Heng Huang, Tainan, TW;
Ren-Fong Cai, Taichung, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Abstract
A p-type metal oxide semiconductor material is provided, which is composed of AlGeO, wherein 0<x≦0.6, and 1.0≦y≦2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.