Hsin-Hwei Hsu

Title: Innovations of Hsin-Hwei Hsu in Nonvolatile Memory Devices

Introduction

Hsin-Hwei Hsu is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of nonvolatile memory devices, particularly through his innovative approaches to memory technology. His work focuses on enhancing data writing and erasing efficiency while ensuring low voltage operation.

Latest Patents

Hsu holds a patent for a nonvolatile memory device with a nanowire channel and a method for fabricating the same. This invention utilizes side etching to shrink the side walls of a side-gate, forming a nanowire pattern. The resulting nanowire channel is fabricated on the dielectric of the side walls of the side-gate. This technology allows for dual-gate control, enhancing the performance of nonvolatile memory devices. The fabrication process is designed to be low-cost and straightforward, enabling highly reproducible and mass-producible nanowire devices.

Career Highlights

Hsin-Hwei Hsu is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in various electronic devices, contributing to the evolution of memory storage solutions.

Collaborations

Hsu has collaborated with notable colleagues, including Horng-Chih Lin and Chun-Jung Su, to further his research and development efforts in the field of nonvolatile memory devices.

Conclusion

Hsin-Hwei Hsu's innovative contributions to nonvolatile memory technology demonstrate his commitment to advancing the field. His patented methods and collaborative efforts position him as a key figure in the ongoing evolution of memory devices.