The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Feb. 04, 2008
Horng-chih Lin, Hsinchu, TW;
Chun-jung Su, Gueiren Township, Tainan County, TW;
Hsin-hwei Hsu, Taipei, TW;
Horng-Chih Lin, Hsinchu, TW;
Chun-Jung Su, Gueiren Township, Tainan County, TW;
Hsin-Hwei Hsu, Taipei, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A nonvolatile memory device with nanowire channel and a method for fabricating the same are proposed, in which side etching is used to shrink side walls of a side-gate to form a nanowire pattern, thereby fabricating a nanowire channel on the dielectric of the side walls of the side-gate. A nonvolatile memory device with nanowire channel and dual-gate control can thus be achieved. This nonvolatile memory device can enhance data writing and erasing efficiency, and also has the capability of low voltage operation. Moreover, through a process of low cost and easy steps, highly reproducible and mass producible fabrication of nanowire devices can be accomplished.