Hsin-Han Lee

Title: Hsin-Han Lee: Innovator in Magnetic Memory Technology

Introduction

Hsin-Han Lee is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of magnetic memory technology, holding a total of 10 patents. His work focuses on advancing the capabilities of magnetic random access memory (MRAM) and related devices.

Latest Patents

One of Hsin-Han Lee's latest patents is a magnetic random access memory structure. This MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack consists of a first free layer, a first tunnel barrier layer, and a first fixed layer. The voltage control electrode is positioned on the first MTJ stack, while the second MTJ stack includes a second fixed layer, a second tunnel barrier layer, and a second free layer. The second write electrode is situated on the second MTJ stack.

Another notable patent is for an in-plane magnetized spin-orbit magnetic device. This device comprises a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is placed on the heavy metal layer, and the magnetic tunnel junction is positioned on the antiferromagnetic layer. The magnetic tunnel junction features a free layer, a barrier layer, and a pinned layer, with the barrier layer located on the free layer and the pinned layer on the barrier layer. The free layer has a rounded rectangle film surface shape.

Career Highlights

Hsin-Han Lee has worked with notable organizations such as the Industrial Technology Research Institute and Jochu Technology Co., Ltd. His experience in these institutions has allowed him to develop innovative technologies that push the boundaries of magnetic memory applications.

Collaborations

Hsin-Han Lee has collaborated with talented individuals in his field, including Shan-Yi Yang and Yao-Jen Chang. These partnerships have contributed to the advancement of his research and the successful development of his inventions.

Conclusion

Hsin-Han Lee is a distinguished inventor whose work in magnetic memory technology has led to significant advancements in the field. His innovative patents and collaborations highlight his commitment to pushing the boundaries of technology.