Hsin-Feng Li

Title: Hsin-Feng Li: Innovator in Solar Cell Technology

Introduction

Hsin-Feng Li is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of solar cell technology, holding a total of 2 patents. His work focuses on innovative methods for fabricating solar cells, which are crucial for advancing renewable energy solutions.

Latest Patents

Hsin-Feng Li's latest patents include a solar cell and a method of fabricating the same. The solar cell comprises a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer, and a first electrode layer. The semiconductor base has a first doped type, while the first doped semiconductor layer, which is placed on the semiconductor base, features a doped contact region. The insulating layer is positioned on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is then placed on the insulating layer and the doped contact region. Notably, the first doped semiconductor layer, the doped contact region, and the second doped semiconductor layer possess a second doped type, with the dopant concentration of the second doped semiconductor layer lying between that of the first doped semiconductor layer and the doped contact region. The first electrode layer is aligned with the doped contact region.

The method of fabricating a solar cell involves providing a first type semiconductor substrate with a first surface and a second surface. A second type doped diffusion region is formed in parts of the first type semiconductor substrate, extending from the first surface. An anti-reflection coating (ARC) is created in contact with the second type doped diffusion region over the first surface. A conductive paste, containing conductive particles and dopant, is applied over the ARC. A co-firing process is then executed to allow the conductive paste to penetrate the ARC, forming a first contact conductor embedded within it. During this process, the dopant diffuses into the second type doped diffusion region, resulting in the formation of a second type heavily doped diffusion region. Finally, a second contact conductor is established on the second surface.

Career Highlights

Hsin-Feng Li is currently associated with AU Optronics Corporation, a leading company in the display and solar energy sectors. His innovative work in solar cell technology has positioned him as